Packaged proprietary design InGaAs balanced photodiode (PD), that is optimized for high input optical power, high common mode rejection and maximum output current linearity. The device is designed to work for RF over fiber links that require high dynamic range, low noise figure and high RF gain. The internal components are soldered and laser welded, ensuring maximum reliability and performance stability with ambient temperature variation. On chip 50 Ω termination ensures impedance matching with following RF stages. Bias is provided from side pins and no external bias T is required.